Short circuit elimination for grid components in ion rocket engine;
离子火箭发动机栅极组件短路消除方法
Analysis of the Effects of Grid on the Beam Performance;
栅极对电子注性能的影响分析
The thruster s grid is one of the many key components in the influence of the thruster life.
推力器栅极部分是影响推力器寿命的主要关键部件之一。
Particle simulation of ion thruster grids was carried out via particle-in-cell(PIC) method and numerical method for calculating the erosion depth of the accelerator grid downstream surface was developed.
使用聚焦深度表面测量(DFF)方法对加速栅极下游表面腐蚀深度进行了测量,并将测量结果与数值模拟结果进行了比较,所使用的数值方法为PIC-Monte Carlo方法。
IT with dome grids are subject to significant thrust losses due to the divergence o f the ion beam.
栅极是离子光学系统的主要组件,作者主要针对大面积球面栅的束发散较大的问题,对栅极进行了补偿设计,目的是减小束发散角。
New type gate electrode of CNT-FED fabricated by chemical corrosive method;
新型场发射器件中栅极的化学刻蚀制备(英文)
Using the high-quality mica plate as substrate materials, a new gate electrode structure was fabricated successfully with silver slurry and simple screen-printing process.
利用优质云母板作为栅极结构基底材料,结合简单的丝网印刷工艺将导电银浆制作成条状栅极,制作了新型的栅极结构;采用高温分解方法制备了碳纳米管薄膜阴极,制作了三极结构碳纳米管阴极平板显示屏样品。
By tying gate and substrate of MOSFET together,a Dynamic Threshold MOS(DTMOS) is obtained.
通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。
The rate of successfully fabricating device was improved with the new gate structure, which decreased the device cost and avoided the damag.
利用优质云母板作为绝缘材料,结合简单的丝网印刷工艺制作了新型的栅极结构。
A brief review of development of high K gate dielectrics is provided.
介绍了国内外对高K栅极介质的研究现状。
grounded-grid-triode circuit
栅极接地式三极管电路
grid ,screen of suppressor, for electronic tubes and valves
电子管屏栅极或遏止栅极
IIL gate structure
集成注入逻辑栅极结构
grid controlled mercury-arc rectifier
栅极控制汞弧整流器
single gate FET
单栅极场效应晶体管
grid autotransformer coupling
栅极自耦变压器耦合
gate oxide integrity
栅极氧化层的完整性
aligned grid tube
栅极中点校直的电子管
grid-pulse triode oscillator
栅极脉调制三极管振荡器
grounded-grid-triode mixer
栅极接地式三极管混频器
Gate Leakage Properties of Small-Scaled High-k Gate Dielectric MOS Devices;
小尺寸高k栅介质MOS器件栅极漏电特性研究
Novel Structure Trench E-JFET with Adding Oxide Region beneath Gate
栅极下加氧化层的新型沟槽栅E-JFET仿真研究
microwave tube (excl. grid-controlled tubes)
微波管(不包括栅极控制电子管)
ground gate amplifier
场效应管栅极接地放大器
power MOSFET gate drive circuit
功率场效应晶体管栅极驱动电路
Study on the Crosswise Multi-Gate SOI MOS and Its Application in Circuits;
横向多栅极SOI MOS的研究及电路应用
The Optimization of Metal Co Replace Ti in IC Gate Application
金属薄膜钴在栅极取代钛的工艺优化
Research and Design of Charge Pump for TFT-LCD Gate Drive
TFT-LCD栅极驱动电荷泵的研究与设计
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