Finally,the possibility for using doped semiconductor and nanometer material to achieve infrared and rada.
最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性。
Structural Stabilities and Electronic Properties of Several Dopants and Surfaces of Semiconductors
半导体掺杂和表面若干稳定结构及其性质
To treat(a semiconductor) with a dopant.
加入掺杂剂用掺杂剂给(半导体)涂上保护层
Synthesis, Doping and Optical Properties of ZnO Semiconductor Nanocrystallines;
半导体纳米ZnO的制备、掺杂及光学性质
Fe-doped In_2O_3 Room Temperature Ferromagnetic Semiconductor;
Fe掺杂In_2O_3室温磁性半导体
Structure and Magnetic Properties of Fe-Doped ZnO Dilute Magnetic Semiconductors
Fe掺杂ZnO稀磁半导体的结构与磁性
Effect of Dopant on BNCP Semiconductor Laser Sensitivity
掺杂对BNCP半导体激光起爆感度的影响
Electric Field Strength Numerical Calculation of the Gradient Doping Semicondouction
梯度掺杂半导体电场强度的数值计算
Study of Room Temperature Ferromagnetism in Fe-doped ZnO Diluted Magnetic Semiconductors
Fe掺杂ZnO稀磁半导体室温铁磁性研究
Doping- The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂-把搀杂剂掺入半导体,通常通过扩散或离子注入工艺实现。
Numerical Calculation of the Fermi Energy in Single-Doped and Co-doped Semiconductors
单掺杂及混合掺杂半导体费米能级随温度变化的数值计算
Research Progress of Ⅱ-Ⅵ Group Semiconductor Nanocrystals Doping
Ⅱ-Ⅵ族半导体纳米晶体的掺杂研究进展
High temperature annealing treatment on Co doped ZnO bulks
Co掺杂的ZnO稀磁半导体块体的退火热处理研究
Study on the Doped-semiconductors and Quantum Well Materials Irradiated by the Free-electron Lasers;
自由电子激光对掺杂半导体及半导体量子阱材料的辐照研究
Study on Theoretical Calculation of Optimum Doping Content in Luminescence Materials;
几种半导体发光材料最佳掺杂含量的理论研究
The Synthesization of Co-doped ZnO Matrix Diluted Magnetic Semiconductors Using the Sol-gel Process;
溶胶—凝胶法制备Co掺杂ZnO基稀磁半导体的研究
Fe-doped ZnO Diluted Magnetic Semiconductor Prepared by Sol-Gel Method;
溶胶—凝胶法制备Fe掺杂ZnO基稀磁半导体
Study on Doping and Antimicrobial Effect of Semiconductive Metallic Oxides;
半导体氧化物的掺杂及其抗菌性能研究
Research of Structure and Magnetism for Cr Doped ZnO-based Diluted Magnetic Semiconductors;
Cr掺杂ZnO基稀磁半导体薄膜结构和磁性研究
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