With increasing of immersion time,rust preventive oil coating transformed from p type semiconductor at the early stage of immersion to n type semiconductor,two rev.
防锈油膜在 5 %Na2 SO4溶液中的失效过程存在半导体导电特征 ,随着浸泡时间的延长 ,防锈油膜从浸泡初期的p型半导体转变为n.半导体 ,转变过程中 ,防锈油膜中出现两个空间电荷过渡层 。
Then we subject the semiconductor to impurity doping, which turns it into either a p-type or an n-type semiconductor.
然后我们使半导体经过渗杂,以将其转变成p型或n型半导体。
When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.
使一块金属与n型半导体接触时,电子将从半导体流到金属。
The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal.
在p型和n型半导体材料之间渡越区中的一个面,在这里施主杂质和受主杂质的浓度相等。
Investigation of TiC Ohmic Contacts to N-type 4H-SiC Semiconductor;
TiC/n型4H-SiC半导体欧姆接触研究
Semiconductors are made in two types the N-type and the P-type.The N-type is ready to give up electrons and the P-type liable to accept them.
半导体制两种类型N型和P型。N型可释放电子,而P型容易接受电子。
In practical use, an N-type and a P-type are created side by side in the same semi-conductor Crystal, forming a P-N junction.
在实际应用,中在一个半导体晶体上总是同时形成一个n型和一个p型,组成一个正p-n结。
Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor
n型金属氧化物半导体场效应晶体管噪声非高斯性研究
n well cmos process
n 阱互补金属氧化物半导体工艺
Activation of room-temperature ferromagnetism in Mn doped ZnO thin films by N codoping
Mn和N共掺ZnO稀磁半导体薄膜的研究
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
在半导体材料中维持电流的最小单元,在P型硅中是空穴,在N型硅中是自由电子。
In electronics, an interface between a P-type and N-type semiconductor material ; such an interface produces a diode effect.
在电子技术中,一种P型和N型半导体材料之间的界面,这种界面可以产生二极管效应。
Majority Carrier- A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子-一种载流子,在半导体材料中起支配作用的空穴或电子,例如在N型中是电子。
Preparation and Photocatalytic Activity of n-type Oxide Semiconductor Micro-nano Materials by Electrospinning;
n型氧化物半导体微纳米材料的静纺丝法制备技术及其光催化性能研究
Photoluminescence and Nonlinear Optical Study of Diluted Magnetic Semiconductor (GaMn)N
稀磁半导体(GaMn)N发光及非线性光学特性研究
Thickness Measurement of In_xGa_(1-x)N Semiconductor Film Based on Reflection Spectra
基于反射光谱的In_xGa_(1-x)N半导体薄膜厚度测量
Characteristics of dilute magnetic semiconductor(Ga,Mn)N grown by ECR-PEMOCVD
基于ECR-PEMOCVD生长的稀磁半导体(Ga,Mn)N的特性
enhancement mos
增强型金氧半导体掐
N-P-N semiconductor triode
NPN型半导体三极管
CopyRight © 2020-2024 优校网[www.youxiaow.com]版权所有 All Rights Reserved. ICP备案号:浙ICP备2024058711号