Redistribution of Ge Incorporated into Silicon Through Cryogenic Implantation After RTP;
低温注入硅片中的锗在快速热处理后的再分布
The work is intended to examine the effect of rapid thermal processing (RTP) in different atmospheres (N 2,O 2,Ar) on the generation and annihilation of thermal donors (TDs) in silicon.
研究了不同气氛 (N2 、O2 、Ar)下高温快速热处理 (RTP)对热施主形成和消除特性的影响 。
Nonocrystalline Si (nc Si) thin films were prepared by crystallization of the hydrogenaed amorphous Si (a Si) films using the three step Rapid Thermat Processing (RTP), i.
使用除氢、高温成核和低温生长的三段式快速热处理方法,将常规方法制备的氢化非晶硅(a-SiH)薄膜晶化成纳米硅(nc-Si)薄膜。
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes;
快速热处理对应变InGaAs/GaAs单量子阱激光二极管电子发射和DX中心的影响
In isfound that rapid thermal annealing can improve the 77K photoluminescence efficiency and electronemission from the active layer, due to the removal of nonradiative centers from the InGaAs/GaAs interface.
8)As/GaAs折射率梯度变化异质结单量子阱激光二极管的快速热处理(RTA)效应。
BaSrTiO3(BST) thin films were deposited by radio frequency magnetron sputtering,and then treated by rapid thermal annealing process.
采用射频溅射法在Si基片上制备BaSrTiO3(BST)薄膜,利用X射线衍射和原子力显微镜(AFM)研究了快速热处理温度和时间对BaSrTiO3薄膜微结构的影响。
With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped (As and B) Si(001) substrates by rapid thermal processing (RTP).
在未掺杂和掺杂(包括As和B)的硅衬底上通过物理溅射淀积Ni薄膜,经快速热处理过程(RTP)完成硅化反应。
Aluminum back surface field(BSF) fabricated by rapid thermal processing or conventional processing was investigated by the means of spreading resistance profile,X-ray diffraction and scanning electron microscope.
分别采用常规和快速热处理在800℃制备了单晶硅太阳电池的铝背场,并利用扩展电阻、X射线衍射和扫描电镜研究了铝背场的载流子浓度分布、铝硅相的组成和表面形貌。
The antireflection properties of amorphous silicon nitride thin films are measured after rapid thermal processing(RTP) at different temperatures for different durations.
采用快速热处理对电池片表面非晶氮化硅膜进行不同温度和不同时间热处理退火比较,研究退火对薄膜减反射性能的影响。
The XRD shows that conventional thermal annealing(CTA) is better than rapid thermal annealing(RTA) for the PZT thin films with(110) preferred orientation.
原子力显微镜(AFM)显示:快速热处理方式使PZT薄膜的晶粒具有自形晶结构,晶粒的排布更为有序,从而改善了薄膜的致密性。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature,the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
In this paper, the micro-structure and annealing behavior of void defect in large-diameter CZSi crystal have been systematically investigated by using AFM and RTA.
本文利用原子力显微镜及快速热处理技术,针对大直径直拉硅单晶中的空洞型微缺陷进行了系统的研究,分析了空洞型缺陷FPDs的微观形貌,及在热处理过程中的行为。
Sol-Gel method and rapid thermal process (RTP) were used to fabricate and crystallize Y_ 2.
为使YIG磁性薄膜应用到Si集成电路中,利用Sol-Gel技术晶化温度低的特点,结合快速热处理(RTP)工艺在Si基上制备了Y2。
The effects of rapid thermal process (RTP) on the DZ and oxygen precipitation of large diameter Czochralski silicon are investigated.
主要研究了快速热处理 ( RTP)对大直径直拉 ( CZ)硅片的清洁区 ( DZ)和氧沉淀的影响 。
Rapid thermal process (RTP) was performed to heavily doped silicon wafers in Ar and N2 ambient.
在氮气和氩气气氛下,对重掺杂硅片进行快速热处理,研究了快速热处理温度、降温速度和保温时间对重掺杂硅片中氧沉淀的影响。
A Study on the Temperature Stability of Rapid Thermal Process
快速热处理设备温度稳定性研究
Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;
直拉硅单晶的快速热处理(RTP)研究
Influences of Rapid Annealing on Microstructure of BaSrTiO_3 Thin Films
快速热处理对BaSrTiO_3薄膜微结构的影响
Investigation of Intrinsic Gettering Process Based on Rapid Thermal Process in CMOS Integrate Circuit Process Flow;
模拟CMOS集成电路热处理过程中基于快速热处理内吸杂工艺的研究
Moreover, the mechanism for the dissolution of oxygen precipitates by RTP is discussed.
另外,计论了快速热处理消融氧沈淀的物理机制。
Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Doped Silicon Wafers;
快速热处理对重掺杂硅片中氧沉淀的影响
Effect of Rapid Thermal Processing on Oxygen Precipitation Behavior in Czochralski Silicon;
快速热处理对直拉硅片氧沉淀行为作用
Oxidation resistance of Ti_2AlC/TiAl composite by rapid heat treatment
Ti_2AlC/TiAl复合材料经快速热处理后的抗氧化性
ALUMINUM BACK SURFACE FIELD OF SILICON SOLAR CELL FABRICATION BY RAPID THERMAL PROCESSING
单晶硅太阳电池铝背场的快速热处理制备
Effect of Rapid Thermal Processing on the Reflectance of Silicon Nitride Thin Films
快速热处理对氮化硅减反射性能的影响
Investigation of Acid Texturing of Poly-Si and Properties of Silicon Nitride after Rapid Thermal Process;
酸腐多晶硅表面织构及氮化硅薄膜快速热处理性能的研究
Effect of Rapid Thermal Annealing on Void Defects and Denuded Zone in Large-Diameter CZ-Si;
快速热处理对大直径直拉硅中空洞型微缺陷及清洁区的影响
Effects of Rapid Thermal Processing on Oxygen Precipitation and Internal Gettering in Czochralski Silicon;
快速热处理对直拉单晶硅中氧沉淀和内吸杂的影响
EFFECT OF TRANSITION-METAL CONTAMINATION ON MINORITY LIFETIME IN CAST MULTI-CRYSTALLINE SILICON UNDER RAPID THERMAL PROCESSING
快速热处理工艺下金属杂质对铸造多晶硅少子寿命的影响
Heater quickly with big channel and high classical control bottom.
宽烫槽加热形式,高级抛光处理床面,快速加热。
Manufacture and Application of Fleet Mending Materials for Top Liner of Heat Treatment Furnace
热处理炉炉顶快速修补料的研制与应用
Informationization construction to promote rapid and healthy development of heat treatment enterprises
信息化建设促进热处理企业快速健康发展
For batch loads of castings, small fabrications and heat treated parts, a tumble machine is ideal, being quick and efficient.
铸件、的结构件和热处理件处理速度快、果好可成批加入。
biological section rapid treater
生物切片快速处理仪
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