The dislocation distribution of Cd1-xZnxTe (CZT) crystal with Vertical Bridgman Method had been analyzed by observing the etch pits density.
使用观察位错蚀坑密度方法研究了垂直布里奇曼法生长的Cd1-xZnxTe(CZT)单晶体位错分布规律。