Photoluminescence (PL) and photoreflectance (PR) spectra of GaInNAs/GaAs multiple quantum wells (MQWs) grown on GaAs substrate by MBE are measured over a range of temperature and excitation power density.
研究了 Ga In NAs/Ga As多量子阱在不同温度和激发功率下的光致发光 (PL )谱以及光调制反射 (PR)谱 。
The experimental results in GaAs/AlGaAs and strained InGaAs/GaAs multiple quantum wells by using DR technique at room temperature were presented, and compared with the experimental results of photoreflectance (PR) spectra and the theoretical values.
报道一种通过转动样品来实现空间调制微分反射(DR)光谱技术,给出GaAs/AlGaAs多量子阱和应变InGaAs/GaAs多量子阱在室温下的DR谱实验测量结果,并与光调制反射谱(PR)实验和理论计算结果相比较。
The photoluminescence, photoreflectance and Raman spectra of ZnTe/Zn 1 x Mn x Te superlattice samples grown by MBE technique were studied from 11 to 80K.
在11K-80K温度范围内研究了用MBE生长的ZnTe/Zn1-xMnxTe超晶格样品的光致发光光谱、光调制反射谱和拉曼散射谱。
In this article,we report another form o f photoreflectance spectroscopy-space differential photoreflectance (SDPR) spec troscopy.
本文报道了空间差分光调制反射光谱 ,指出了它与常规光调制反射谱的区别。
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